Denuded Zones in Czochralski Silicon Wafers

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Numerical Modeling of Czochralski Silicon Crystal Growth

Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...

Contactless Characterization of Silicon Wafers

Contactless measurements are attractive and more commonly used because they do not contaminate the sample and generally do not require sample preparation. After an outline of the more common contactless characterization techniques, I will discuss a few of these in more detail. In particular resistivity or doping density profiling, minority carrier lifetime, stress, temperature, layer thickness,...

Terahertz imaging of silicon wafers

Silicon samples with and without implanted layers have been imaged with a standard time-domain terahertz ~THz! imaging system. The carrier concentration and mobility of the substrate have been extracted from the frequency dependence of the THz transmittance using a simple model based on the Drude approximation. The carrier concentration of implanted layers could be determined simply from the re...